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Si3853DV
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
Junction-to-Ambient a
Junction-to-Foot
t ≤ 5s
Steady State
Steady State
MOSFET
Schottky
MOSFET
Schottky
MOSFET
MOSFET
R thJA
R thJF
93
103
130
140
75
80
110
125
150
165
90
95
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
V GS(th)
I GSS
I DSS
I D(on)
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
V DS = - 16 V, V GS = 0 V
V DS = - 16 V, V GS = 0 V, T J = 75 °C
V DS ≥ - 5 V, V GS = - 4.5 V
- 0.5
-5
± 100
-1
- 10
V
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = - 4.5 V, I D = - 1.8 A
V GS = - 2.5 V, I D = - 1.0 A
V DS = - 5 V, I D = - 1.8 A
0.160
0.280
3.6
0.200
0.340
Ω
S
Diode Forward
Voltage a
V SD
I S = - 1.05 V, V GS = 0 V
- 0.83
- 1.10
V
Dynamic b
Total Gate Charge
Q g
2.7
4.0
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Q gs
Q gd
t d(on)
V DS = - 10 V, V GS = - 4.5 V, I D = - 1.8 A
0.4
0.6
11
17
nC
Rise Time
Turn-Off DelayTime
Fall Time
Body Diode Reverse Recovery Time
t r
t d(off)
t f
t rr
V DD = - 10 V, R L = 10 Ω
I D ? - 1 A, V GEN = - 4.5 V, R g = 6 Ω
I F = - 1.05 A, dI/dt = 100 A/μs
34
19
24
20
50
30
36
40
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Forward Voltage Drop
Symbol
V F
Test Conditions
I F = 0.5 A
I F = 0.5 A, T J = 125 °C
Min.
Typ.
0.42
0.33
Max.
0.48
0.4
Unit
V
V R = 20 V
0.002
0.100
Maximum Reverse Leakage Current
I rm
V R = 20 V, T J = 75 °C
0.06
1
mA
V R = 20 V, T J = 125 °C
1.5
10
Junction Capacitance
C T
V R = 10 V
31
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70979
S09-2276-Rev. B, 02-Nov-09
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